Properties of epitaxial graphene grown on C-face SiC compared to Si-face

Properties of epitaxial graphene grown on C-face SiC compared to Si-face

Effects of aluminum on epitaxial graphene grown on C-face SiC

Stacking of adjacent graphene layers grown on C-face SiC

4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate

We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The polytype stability has been maintained over the larger part of the wafer, but 3C inclusions have not been possible to avoid. Special attention has given to the mechanism of generation and propagation of 3C polytype in 4H-SiC epilayer. Different optical and struc...

Electronic structure of epitaxial graphene grown on the C-face of SiC and its relation to the structure

The interest in graphene stems from its unique band structure that photoemission spectroscopy can directly probe. However, the preparation method can significantly alter graphene’s pristine atomic structure and in turn the photoemission spectroscopy spectra. After a short review of the observed band structure for graphene prepared by various methods, we focus on graphene grown on silicon carbid...